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By adding phosphorus or boron doped, using CZ technology, the production size is 3 inch, 4 inch, 5-55 resistor.Cm, thickness 200-350um of different type N or type P monocrystalline silicon wafer, and silicon wafer edge positioning production according to customer requirements, chamfered silicon wafer, N type P type single crystal silicon wafer. The silicon wafer, the resistivity and thickness of production according to customer requirements.

With monocrystalline silicon as the carrier, various kinds of products such as STD, FR, HER, SF, TVS and so on are produced by the diffusion mode of phosphorus or boron.

The GPP chip is produced by scraping method, and it can be produced according to the needs of customers combined with SIPOS (oxygen doped semi insulating polysilicon) deposition process, which has obvious effect on improving the reliability and stability of the chip itself.

The GPP chip is produced by photoresist method. The technology of SIPOS (oxygen doped semi insulating polysilicon) deposition is applied to improve the quality and reliability of the chip itself.

The GPP chip produced by electrophoretic method can selectively control the area and thickness of glass protection, and the effect of reliability and stability is obvious.